2N7000 Power MOSFET, N Channel, 60 V, 200 mA

2N7000 is suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

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This item: 2N7000 Power MOSFET, N Channel, 60 V, 200 mA
$0.50$7.95
$0.50$7.95
Right Angle 10 Pin PCB Mount Boxed Header
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The 2N7000 Power MOSFET is an N-channel enhancement mode Field Effect Transistor produced using high cell density DMOS technology.

The 2N7000 very high-density process has been designed to minimize on-state resistance while providing rugged, reliable, fast switching performance.

 

Specifications:
  • Channel Type: N Channel
  • Case: TO-92
  • Drain Source Voltage Vds: 60V
  • Continuous Drain Current Id: 200mA
  • Drain Source On State Resistance: 5ohm
  • Transistor Mounting: Through Hole
  • Rds(on) Test Voltage: 10V
  • Gate Source Threshold Voltage Max: 2.1V
  • Power Dissipation: 400mW
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C
  • Qualification: – MSL:
Package Included:

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Notes:

1. There may be slight size Deviations due to manual Measurement, different Measuring methods and tools.
2. The picture may not reflect the actual colour of the item because of different Photographing lights, angles and display monitors.

 

Weight 0.002 kg
Dimensions 3 × 2 × 1 cm
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SKU Product Type Download/View
2N7000 Power MOSFET, N Channel, 60 V, 200 mA - 2N7000 Datasheet Download

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