30SQ100 100V 30A Schottky Diode

30SQ100 100V 30A Schottky Diode Through Hole R-6. These devices employ the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. They are ideal for rectifier use in low−voltage, high−frequency inverters, free-wheeling diodes, and polarity protection diodes.

30SQ100  is Also used in Solar Cell junction boxes as a bypass diode for protection, using DC forward current without reverse bias.

Specifications:

• Manufacturer Part No:30SQ100
• Manufacturer: ‎Depends on supply 
• Technology: Schottky
• Maximum Recurrent Peak Reverse Voltage: 100
• Maximum RMS Voltage: 56
• Maximum DC Blocking Voltage: 100
• MaximumAverage Forward Rectified Current: 30A
• Peak ForwardSurgeCurrent 8.3ms single half sine-wave superimposed on rated load: 275A
• MaximumDCReverseCurrent @Tj=25°C: 0.8v
• ESD: 15000v
• Operating Temperature: -55°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: R-6, Axial
• Supplier Device Package: R-6

Package includes:30SQ100 100V 30A Schottky Diode 5, 10 or 25 pack

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