IRFB3607PBF 80A 75 V MOSFET TO-220

IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area. that offers fully characterized capacitance and avalanche SOA

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The IRFB3607PBF 80A 75 V MOSFET TO-220 is a HEXFET® single N-channel Power MOSFET that offers fully characterized capacitance and avalanche SOA. It is suitable for high-efficiency synchronous rectification in SMPS, hard-switched and high-frequency circuits.

 

Specifications:

  • Product Category: MOSFET
  • RoHS: Details
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Transistor Polarity: N-Channel
  • Number of Channels: 1 Channel
  • Vds – Drain-Source Breakdown Voltage: 75 V
  • Id – Continuous Drain Current: 80 A
  • Rds On – Drain-Source Resistance: 7.34 mOhms
  • Vgs – Gate-Source Voltage: – 20 V, + 20 V
  • Vgs th – Gate-Source Threshold Voltage: 1.8 V
  • Qg – Gate Charge: 84 nC
  • Minimum Operating Temperature: – 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd – Power Dissipation: 140 W
 

Package included: IRFB3607PBF 80A 75 V MOSFET TO-220 1,2 or 5 pack

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Notes:

1. There may be slight size deviations due to manual measurement, different measuring methods and tools.
2. The picture may not reflect the actual colour of the item because of different photography lights, angles and display monitors.

Weight 0.0 kg
Dimensions 5 × 1 × 1 cm
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IRFB3607PBF 80A 75 V MOSFET TO-220 - IRFB3607PBF Datasheet Download

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