IRFB3607PBF 80A 75 V MOSFET TO-220
IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area. that offers fully characterized capacitance and avalanche SOA
The IRFB3607PBF 80A 75 V MOSFET TO-220 is a HEXFET® single N-channel Power MOSFET that offers fully characterized capacitance and avalanche SOA. It is suitable for high-efficiency synchronous rectification in SMPS, hard-switched and high-frequency circuits.
Specifications:
- Product Category: MOSFET
- RoHS: Details
- Technology: Si
- Mounting Style: Through Hole
- Package / Case: TO-220-3
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Vds – Drain-Source Breakdown Voltage: 75 V
- Id – Continuous Drain Current: 80 A
- Rds On – Drain-Source Resistance: 7.34 mOhms
- Vgs – Gate-Source Voltage: – 20 V, + 20 V
- Vgs th – Gate-Source Threshold Voltage: 1.8 V
- Qg – Gate Charge: 84 nC
- Minimum Operating Temperature: – 55 C
- Maximum Operating Temperature: + 175 C
- Pd – Power Dissipation: 140 W
Package included: IRFB3607PBF 80A 75 V MOSFET TO-220 1,2 or 5 pack
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Notes:
1. There may be slight size deviations due to manual measurement, different measuring methods and tools.
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Weight | 0.0 kg |
---|---|
Dimensions | 5 × 1 × 1 cm |
Qty | 1Pc, 2Pc, 5Pc |
Product Applications
Current Product Support
SKU | Product | Type | Download/View |
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IRFB3607PBF 80A 75 V MOSFET TO-220 - IRFB3607PBF | Datasheet | Download |