MMBT5551 G1 2N5551 SOT-23 NPN Transistor
MMBT5551 G1 2N5551 SOT-23 is an NPN Switching Transistor housed in a plastic package. It is suitable for use with switching and linear amplification.
MMBT5551 G1 2N5551Â 160 V, 600 mA, 220 mW, SOT-23 is an SMD package NPN Transistor with a VCE of 160V and a collector current of 600mA. It can be used as a small signal-switching transistor.
* Bi-polar Junction Transistor, PNP = Positive – Negative – Positive ( + – + ), NPN = Negative – Positive – Negative ( – + -)
Specifications:
- Maximum Collector Power Dissipation (Pc): 220 nW
- Maximum Collector-Base Voltage |Vcb|: 180 V
- Maximum Collector-Emitter Voltage |Vce|: 160 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.6 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Transition Frequency (ft): 100 MHz
- Collector Capacitance (Cc): 10 pF
- Forward Current Transfer Ratio (hFE), MIN: 80
- Supplier Device Package: SOT-23
- Supplied in anti-static packagingÂ
The package includes MMBT5551 G1 2N5551 SOT-23 NPN Transistor 5,10 and 25 Pack Bulk Pack Upon request.
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Notes:
1. There may be slight size deviations due to manual measurement and different measuring methods and tools.
2. The picture may not reflect the actual colour of the item because of different Photography lights, angles, and display monitors.
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Pack Qty | 5 Pack, 10 Pack, 25 Pack |
Product Applications
Current Product Support
SKU | Product | Type | Download/View |
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MMBT5551 G1 2N5551 SOT-23 NPN Transistor - 2N3904 | Datasheet |