MMBT5551 G1 2N5551 SOT-23 NPN Transistor

MMBT5551 G1 2N5551  160 V, 600 mA, 220 mW, SOT-23 is an SMD package NPN Transistor with a VCE of 160V and a collector current of 600mA. It can be used as a small signal-switching transistor.

* Bi-polar Junction Transistor, PNP = Positive – Negative – Positive ( + – + ), NPN = Negative – Positive – Negative ( – + -)

Specifications:

• Maximum Collector Power Dissipation (Pc): 220 nW
• Maximum Collector-Base Voltage |Vcb|: 180 V
• Maximum Collector-Emitter Voltage |Vce|: 160 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 0.6 A
• Max. Operating Junction Temperature (Tj): 175 °C
• Transition Frequency (ft): 100 MHz
• Collector Capacitance (Cc): 10 pF
• Forward Current Transfer Ratio (hFE), MIN: 80
• Supplier Device Package: SOT-23
• Supplied in anti-static packaging 

The package includes MMBT5551 G1 2N5551 SOT-23 NPN Transistor 5,10 and 25 Pack Bulk Pack Upon request.

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Notes:

1. There may be slight size deviations due to manual measurement and different measuring methods and tools.
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