2N3906 40V 200mA 625mW Transistors

2N3906 works by allowing current to flow from the collector to the emitter when a small current is applied to the base. Unlike NPN

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2N3906 40V 200mA 625mW PNP GP Power Amplification or Switching Transistor TO-92

 

Specifications:
  • Mounting Style: Through Hole
  • Package / Case: TO-92
  • Transistor Polarity: PNP
  • Configuration: Single
  • Collector-Emitter Voltage VCEO Max: 40 V
  • Collector- Base Voltage VCBO: 40 V
  • Emitter- Base Voltage VEBO: 5 V
  • Collector-Emitter Saturation Voltage: 400 mV
  • Maximum DC Collector Current: 200 mA
  • Pd – Power Dissipation: 625 mW
  • Gain Bandwidth Product fT: 250 MHz
  • Minimum Operating Temperature: – 55 C
  • Maximum Operating Temperature: + 150 C

 

Package includes: 2N3906 40V 200mA 625mW Transistors 2,5,10 or 25 Pack

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Notes:

1. There may be slight size Deviations due to manual measurement, different Measuring methods and tools.
2. The picture may not reflect the actual colour of the item because of different Photographing lights, angles and display monitors.

Weight 0.001 kg
Dimensions 1 × 1 × 0.5 cm
Pack Qty

2 Pack, 5 Pack, 10 Pack, 25 Pack



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2N3906 40V 200mA 625mW Transistors - 2N3906 Datasheet Download

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